Milind S. Kulkarni, "The agglomeration dynamics of self-interstitials in growing Czochralski silicon crystals"
Journal of Crystal Growth, 284 (2005) 353-368
Samanta, G. and M. S. Kulkarni, "Efficient computation of population distribution of
microdefects at any location in growing Czochralski silicon single crystals,” J. Cryst.
Growth, 393, 49-53 (2014).
Voronkov V. V., B. Dai, and M. S. Kulkarni, “Fundamentals and Engineering of the
Czochralski Growth of Semiconductor Silicon Crystals,” In: P. Bhattacharya, R. Fornari, and
H. Kamimura (eds.), Comprehensive Semiconductor Science and Technology, 3, pp 81-169,
Elsevier (2011).
Kulkarni, M. S., “Continuum-Scale Quantitative Defect Dynamics in Growing Czochrlaski
Silicon Crystals,” In: G. Dhanaraj, K. Byrappa, V. Prasad, and M. Dudley (eds.), Springer
Handbook of Crystal Growth, Chapter. 38, pp 1281, Springer (2010).
Huang, D., C. Claeys, P. Song, C. Yu, T. Jiang, M. Kulkarni, Y. Shi, R. Huang, H. Wu, K.
Wu, W. Wang, Q. Lin, A. Peng, ECS Trans. 18, (1), Editors. (2009).
Dai, B., B. Devulapalli, P. Gunjal and M. S. Kulkarni, “Calibration of the Enthalpy-Porosity
Based Method for CZ Silicon Growth,” ECS Trans. 18, (1) 989 (2009).
Dai, B., B. Devulapalli, P. Gunjal and M. S. Kulkarni, “Calibration of the Enthalpy-Porosity
Based Method for CZ Silicon Growth,” ECS Trans. 18, (1) 989 (2009).
Kulkarni, M. S., “Comprehensive Upstream Silicon Processing for Semiconductor and Solar
Applications,” Proceedings of The 5th International Symposium on Advanced Science and
Technology of Silicon Materials, Plenary Paper, Kona (2008).
Gunjal, P. R., M. S. Kulkarni and P. A. Ramachandran, “Melt Flow Simulations of
Czochralski Crystal Growth Process of Silicon for Large Crystals,” ECS Trans. 3, (4) 41
(2006).
Gupta, P. and M. S. Kulkarni, “Simulation of Slip during High-Temperature Annealing of
Silicon Wafers in Vertical Furnaces,” ECS Trans. 3, (4) 211 (2006).
Gupta, P. and M. S. Kulkarni, “Warp of Silicon Wafers Produced from Wire Saw Slicing:
Modeling, Simulation, and Experiments,” ECS Trans. 2, (2) 123 (2006).
Kulkarni, M. S., J. C. Holzer and L. W. Ferry, “The Agglomeration Dynamics of selfinterstitials in the Czochralski Growth of Silicon Crystals,” J. Cryst. Growth., 284, 353-368
(2005).
Kulkarni, M. S. and V. V. Voronkov, “Simplified 2-Dimensional Quantification of the
Microdefect Distributions in silicon Crystals Grown by the Czochralski Process,” J.
Electrochem. Soc., 152, 10, (2005).
Kulkarni, M. S., “A Selective Review of the Quantification of Defect Dynamics in Growing
Czochralski Silicon Crystals,” Ind. & Eng. Chem. Res., 44, 6246-6263 (2005).
Kulkarni, M. S., V. V. Voronkov and R. J. Falster, “Quantification of Defect Dynamics in
Unsteady State and Steady State Czochralski Growth of Monocrystalline Silicon,” J.
Electrochem. Soc., 151, 10, G663-G678 (2004).
Kulkarni, M. S., “A Review and Unifying Analysis Of Defect Decoration and Surface
Polishing by Chemical Etching in Silicon Processing,” Ind. & Eng. Chem. Res., 42, 2558
(2003).
Kulkarni, M. S., J. Libbert, S. Keltner and L. Mulestagno, “A Theoretical and Experimental
Analysis of Macro-Decoration of Defects in Monocrystalline Silicon,” J. Electrochem. Soc.,
149, 2, G153-G165 (2002).
Kulkarni, M. S. and M. P. Dudukovic, “Periodic Operation of Asymmetric Bidirectional
Fixed-Bed Reactors with Temperature Limitations,” Ind. & Eng. Chem. Res., 37, 3, 770
(1998).
Kulkarni, M. S. and M. P. Dudukovic, “Periodic Operation of Asymmetric Bi-Directional
Fixed-Bed Reactors: Energy Efficiency”, Chem. Eng. Sci., 52, 11, 1777 (1997).
Kulkarni, M. S. and M. P. Dudukovic, “A Bi-Directional Fixed-Bed Reactor for Coupling of
Exothermic and Endothermic Reactions,” AIChE J., 42, 10, 2897-2910 (1996).
Kulkarni, M. S. and M. P. Dudukovic, “Dynamics of Gas Phase and Solid Phase Reactions in
Fixed-Bed Reactors,” Chem. Eng. Sci., 51, 11, 3083-3088 (1996).
Kulkarni, M. S. and M. P. Dudukovic, “A Robust Algorithm for Fixed-Bed Reactors with
Steep Moving Temperature and Reaction Fronts,” Chem. Eng. Sci., 51, 4, 571-585 (1996).
