Patents

Patents Invented by RSOLEC Leaders. The IP rights rest with the Assignees

Kulkarni, M. S., P. Gupta, B. Devulapalli, J. Ibrahim, V. Revankar, K. Foli, “Fluidized bed reactor systems,” US Patent No. 8,906,313, 2014

Kulkarni, M. S., P. Gupta, B. Devulapalli, V. Revankar, K. Foli, “Methods for introducing a first gas and a second gas into a reaction chamber,” US Patent No. 8,728,574, 2014

Kulkarni, M. S., P. Gupta, B. Devulapalli, J. Ibrahim, V. Revankar, K. Foli, “Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls,” US Patent No. 8,404,206, 2013

Sreedharamurthy, H., M. S. Kulkarni, R. Schrenker, J. Holzer, H. Korb, “Controlling a meltsolid interface shape of a growing silicon crystal using an unbalanced magnetic field and isorotation,” US Patent No. 8,398,765, 2013.

Muléstagno, L., J. L. Libbert; Jeffrey L., R. J. Phillips, M. S., Kulkarni, M. Banan, and S. J. Brunkhorst, “Silicon wafers with Stabilized Oxygen Precipitate Nucleation Centers and Process for Making the Same,” US patent No. 6,808,781, 2004.

Kulkarni, M. S. and A. Desai, “Silicon Wafering Process flow,” US patent No. 6,294,469 B1, 2001.

Kulkarni, M. S., M. Banan and C. V. Luers, “Single crystal silicon ingot having a high arsenic concentration,” US patent No. 7,132,091, 2006.

Banan, M., M. S. Kulkarni and C. Whitmer, “Multi-Stage Arsenic Doping Process to Achieve Low Resistivity in Silicon Crystal grown by Czochralski Method,” US patent No. 6,312,517, 2001

Kulkarni, M. S., “Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth,” US Patent No. 8,216,362, 2012

Kulkarni, M. S., “Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface,” US Patent No. 8,673,248, 2014

Kulkarni, M. S., “Crystal Puller and Method for Growing a Monocrystalline Ingot,” US patent No. 8,147,613, 2012.

Muléstagno, L., J. L. Libbert; Jeffrey L., R. J. Phillips, M. S., Kulkarni, M. Banan, and S. J. Brunkhorst, “Process for making silicon wafers with stabilized oxygen precipitate nucleation centers,” US patent No. 7,201,800, 2007

Sreedharamurthy, H., M. S. Kulkarni, H. Korb, “Generating a pumping force in a silicon melt by applying a time-varying magnetic field,” Us Patent No. 8,551,247, 2013

Gupta, P., M. S. Kulkarni, C. Zavattari, R. R. Vandamme, “Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control,” US patent No. 7,878,883, 2011.