Crystal Growth
Crystal Growth Macrodynamics
Crystal Growth Nanodynamics
Various microdefects, including oxygen precipitates evolve in Crystal Growth. They will have an impact on efficiency of a select cell structures
Pull Rate
Crystal Growth Oxygen Dyamics for both RCZ and MCZ
Magnetic field stabilises the melt flow and facilitates oxygen control, as silicon melt is a conductor unlike solid silicon.More asymmetric features of horizontal magnetic effects
Simulations using CZSim
Continuous Czochralski (CCZ) Crystal Growth
In continuous Czochralski Process, polysilicon is continuously fed into the melt at the rate crystal is pulled. This provides the following advantages:
- High productivity because of reduced cycle time
- Uniform resistivity
- Low impurity concentration and high life time for a comparable CZ process
- Lower capital investment
Multicrystal Growth by Directional Solidification
Random Grain Growth
Epitaxial Grain Growth
Hybrid Grain Growth
With increase in solidification rate, average grain size decreases. For mono-like-multi (MLM), seed can enable single grain coverage for significant height of ingot.
