Etching
Decorating and Polishing Etching: A Universal Model
The novel model described microdefect decoration and surface polishing in terms of the ratio of the mass transport time scale to the kinetic time scale
The model also requires that decorating etching mixtures are primarily kinetically controlled and the polishing etching mixtures are primarily mass transport influenced.
The presence of mass transfer effects is the source of polishing effect in acid based isotropic etching
Etching Advantages
AS predicted by the model, the polishing efficiency of an etching mixture can be modified by changing the ratio of the mass transport timescale to the kinetic timescale
Roughness as a function of removal in etching at different thickener concentrations
Roughness as a function of removal in etching at different HF concentrations
Etching Experiments
The bubble masking observed by experiments is consistent with the premise of the model
Etchant Comparisons
Macrophotos of the microdefect decoration by different etchants. (Reproduced by permission of The Electrochemical Society, Inc.)
- Secco etchant and Wright etchant are decorating etchants.
- MAE, HF+HNO3 and HF+HNO3+H3PO4 are polishing etchants
Microphotos of the microdefect decoration by different etchants. (Reproduced by permission of The Electrochemical Society, Inc.)
- Secco etchant and Wright etchant are decorating etchants.
- MAE, HF+HNO3 and HF+HNO3+H3PO4 are polishing etchants
Erasure of the microdefect related etch-pits by the polishing etchants: Macrophotos. (Reproduced by permission of The Electrochemical Society, Inc.)
- Secco etchant and Wright etchant are decorating etchants.
- MAE, HF+HNO3 and HF+HNO3+H3PO4 are polishing etchants
Erasure of the microdefect related etch-pits by the polishing etchants: Microphotos. (Reproduced by permission of The Electrochemical Society, Inc.)
- Secco etchant and Wright etchant are decorating etchants.
- MAE, HF+HNO3 and HF+HNO3+H3PO4 are polishing etchants
